IRLR9343TRPBF vs IRFR5505TRPBF 比較

詳細な並列比較: IRLR9343TRPBF メーカー: Infineon および IRFR5505TRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Infineon
IRLR9343TRPBF IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF ✓ 生産中
Infineon
IRFR5505TRPBF IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon

IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon

IRFR5505TRPBF ✓ 生産中

仕様比較

パラメータ IRLR9343TRPBF IRFR5505TRPBF
ブランド Infineon Infineon
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.47 $0.48
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRLR9343TRPBF —
FET Type P-Channel MOSFET —
Technology IR HEXFET IR MOSFET (HEXFET 5th generation)
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] -72 A
On-Resistance RDS(on) max at VGS=-10V 105 mOhm 110 mOhm
Gate-Source Voltage (VGS) max [DATA_NEEDED: max VGS rating] +/-20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) 31 nC (typical) 21.3 nC
Power Dissipation (PD) at Tc=25C 79 W —
パッケージ PG-TO252-3 (DPAK) Surface Mount TO-252AA (DPAK), surface mount
実装タイプ Surface Mount Surface Mount
動作温度範囲 [DATA_NEEDED: Tj min/max operating range] —
RoHS ステータス Compliant Compliant (PBF suffix)
Lead-Free Yes Yes (PBF suffix)
MSLレベル 1 —
Optimized Application Class-D audio amplifier output stages —
Polarity P-Channel P-Channel
Series — HEXFET
Drain-Source Voltage (VDS) max — -55 V
Continuous Drain Current (ID) at TC=25C — -18 A
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Rise Time (tr) — [DATA_NEEDED: tr]
Fall Time (tf) — [DATA_NEEDED: tf]
Maximum Power Dissipation (PD) at TC=25C — 57 W
動作接合温度 — -55 C to +175 C
Thermal Resistance Junction-to-Case (RthJC) — 2.2 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 50 C/W (typical, DPAK on 1 oz copper)

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