IRLS3034TRLPBF vs BSC027N10NS5ATMA1 Vergleich
Detaillierter Direktvergleich von IRLS3034TRLPBF von Infineon und BSC027N10NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLS3034TRLPBF | BSC027N10NS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | NRND |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,55 | $1,10 |
| FET Type | N-Channel MOSFET, Metal Oxide | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25°C | 195 A | — |
| Pulsed Drain Current (IDM) | 343 A | 194 A |
| RDS(on) Max at VGS=10V, ID=195A | 1.7 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V (typical) | — |
| Total Gate Charge (Qg) | 108 nC | — |
| Power Dissipation (PD) at TC=25°C | 375 W | — |
| Betriebstemperaturbereich | -40°C to +175°C (TJ) | [DATA_NEEDED: Tj min/max] |
| Gehäuse | D2PAK (TO-263), Surface Mount | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Technology | IR HEXFET (planar N-channel) | OptiMOS 5 (100V) |
| Lead-Free | Yes (PBF suffix) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Shipping Format | Tape and Reel, 7-inch (TRL) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC027N10NS5ATMA1 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at Ta | — | 23 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 2.7 mOhm |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 214 W |
| Qualification | — | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) |