IRLS3034TRLPBF vs BSC027N10NS5ATMA1 Comparison

Detailed side-by-side comparison of IRLS3034TRLPBF by Infineon and BSC027N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC027N10NS5ATMA1

BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon

BSC027N10NS5ATMA1 Nrnd

Specification Comparison

Parameter IRLS3034TRLPBF BSC027N10NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Nrnd
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $1.10
FET Type N-Channel MOSFET, Metal Oxide β€”
Drain-to-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) at TC=25Β°C 195 A β€”
Pulsed Drain Current (IDM) 343 A 194 A
RDS(on) Max at VGS=10V, ID=195A 1.7 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 2.5 V (typical) β€”
Total Gate Charge (Qg) 108 nC β€”
Power Dissipation (PD) at TC=25Β°C 375 W β€”
Operating Temperature Range -40Β°C to +175Β°C (TJ) [DATA_NEEDED: Tj min/max]
Package D2PAK (TO-263), Surface Mount PG-TSON-8-3 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Technology IR HEXFET (planar N-channel) OptiMOS 5 (100V)
Lead-Free Yes (PBF suffix) β€”
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Shipping Format Tape and Reel, 7-inch (TRL) β€”
Manufacturer β€” Infineon Technologies
Part Number β€” BSC027N10NS5ATMA1
Channel Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 100 V
Gate-Source Voltage (VGS) Max β€” [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta β€” 23 A
Continuous Drain Current (ID) at Tc β€” 100 A
On-Resistance RDS(on) Max at VGS=10V β€” 2.7 mOhm
Power Dissipation (Ta) β€” 3 W
Power Dissipation (Tc) β€” 214 W
Qualification β€” Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

Datasheets & Resources

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