IRLTS2242TRPBF vs IRFR5410TRPBF Vergleich
Detaillierter Direktvergleich von IRLTS2242TRPBF von Infineon und IRFR5410TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLTS2242TRPBF | IRFR5410TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,14 | $0,71 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -20 V | -100 V |
| Continuous Drain Current (ID) at TA=25C | -6.9 A | — |
| Power Dissipation (PD) at TA=25C | 2.0 W | — |
| On-Resistance RDS(on) max at VGS=-10V | 32 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS absolute max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Gate Drive Voltage (logic level) | 4.5 V (fully enhanced), 2.5 V capable | — |
| Technology | IR MOSFET (HEXFET) | HEXFET (advanced process, Gen 5) |
| Gehäuse | TSOP-6 (Micro 6) | TO-252AA (DPAK), surface mount |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | -55 °C to +150 °C (TJ) |
| Package Thermal Resistance (RthJA) | [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] | — |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| Halogenfrei | Yes | — |
| Continuous Drain Current (ID) at TC = 25 °C | — | -13 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | — | 205 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) typ | — | 70 nC |
| Power Dissition (PD) at TC = 25 °C | — | 66 W |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Lead-Free / RoHS Status | — | Lead-free, RoHS compliant (PBF suffix) |
| RDS(on) Test Conditions | — | VGS = -10 V, ID = -7.0 A |