IRLTS2242TRPBF vs IRFR5410TRPBF 对比
详细并排对比 IRLTS2242TRPBF 出自 Infineon 和 IRFR5410TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLTS2242TRPBF | IRFR5410TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.14 | $0.71 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -20 V | -100 V |
| Continuous Drain Current (ID) at TA=25C | -6.9 A | — |
| Power Dissipation (PD) at TA=25C | 2.0 W | — |
| On-Resistance RDS(on) max at VGS=-10V | 32 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS absolute max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Gate Drive Voltage (logic level) | 4.5 V (fully enhanced), 2.5 V capable | — |
| Technology | IR MOSFET (HEXFET) | HEXFET (advanced process, Gen 5) |
| 封装 | TSOP-6 (Micro 6) | TO-252AA (DPAK), surface mount |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C (junction) | -55 °C to +150 °C (TJ) |
| Package Thermal Resistance (RthJA) | [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] | — |
| MSL 等级 | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| Continuous Drain Current (ID) at TC = 25 °C | — | -13 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | — | 205 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) typ | — | 70 nC |
| Power Dissition (PD) at TC = 25 °C | — | 66 W |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Lead-Free / RoHS Status | — | Lead-free, RoHS compliant (PBF suffix) |
| RDS(on) Test Conditions | — | VGS = -10 V, ID = -7.0 A |