IRLTS2242TRPBF vs IRFR5410TRPBF 비교
다음의 상세 나란히 비교: IRLTS2242TRPBF 제조: Infineon 및 IRFR5410TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRLTS2242TRPBF | IRFR5410TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.14 | $0.71 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -20 V | -100 V |
| Continuous Drain Current (ID) at TA=25C | -6.9 A | — |
| Power Dissipation (PD) at TA=25C | 2.0 W | — |
| On-Resistance RDS(on) max at VGS=-10V | 32 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS absolute max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Gate Drive Voltage (logic level) | 4.5 V (fully enhanced), 2.5 V capable | — |
| Technology | IR MOSFET (HEXFET) | HEXFET (advanced process, Gen 5) |
| 패키지 | TSOP-6 (Micro 6) | TO-252AA (DPAK), surface mount |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55C to +150C (junction) | -55 °C to +150 °C (TJ) |
| Package Thermal Resistance (RthJA) | [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] | — |
| MSL 레벨 | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes | — |
| 할로겐 프리 | Yes | — |
| Continuous Drain Current (ID) at TC = 25 °C | — | -13 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | — | 205 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) typ | — | 70 nC |
| Power Dissition (PD) at TC = 25 °C | — | 66 W |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Lead-Free / RoHS Status | — | Lead-free, RoHS compliant (PBF suffix) |
| RDS(on) Test Conditions | — | VGS = -10 V, ID = -7.0 A |