IRLZ34NSTRLPBF vs IRFR5410TRRPBF Vergleich

Detaillierter Direktvergleich von IRLZ34NSTRLPBF von Infineon und IRFR5410TRRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRLZ34NSTRLPBF IRFR5410TRRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,58 $0,49
FET Type N-Channel MOSFET (Metal Oxide Semiconductor)
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC 30 A —
Pulsed Drain Current (IDM) 110 A [DATA_NEEDED: pulsed drain current]
RDS(on) at VGS=5V 35 mOhm (typical) —
Gate Threshold Voltage (VGS(th)) Logic-level (5 V drive compatible) —
Total Gate Charge (Qg) 16.7 nC 70 nC
Power Dissipation (Ta) 3.8 W —
Power Dissipation (Tc) 68 W —
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] —
Gehäuse D2PAK (TO-263), surface mount TO-252AA (DPAK)
Built-in Body Diode Yes —
Configuration Single with built-in diode —
Montageart Surface Mount Surface Mount
Switching Frequency Optimization Below 100 kHz —
Cell Structure HEXFET planar (5th generation) —
Qualification JEDEC standard —
RoHS-Status Compliant (Pb-free) —
Polarity — P-Channel
Technology — HEXFET (5th Generation)
VDS (Drain-Source Voltage) — -100 V
VGS (Gate-Source Voltage) — ±20 V
VGS(th) (Gate Threshold) — -2 V to -4 V
Continuous Drain Current (ID) at Tc=25C — -13 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at 100C]
RDS(on) max at VGS=-10V — 205 mΩ
RDS(on) typical at VGS=-10V — 26 mΩ (per Mouser listing for IRFR5410TRPBF)
Power Dissipation (Pd) at Tc=25C — 66 W
Betriebs-Sperrschichttemperatur — -55C to +150C
Avalanche Rated — Yes
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern