IRLZ34NSTRLPBF vs IRFR5410TRRPBF Comparación
Comparación detallada lado a lado de IRLZ34NSTRLPBF por Infineon y IRFR5410TRRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLZ34NSTRLPBF | IRFR5410TRRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,58 | $0,49 |
| FET Type | N-Channel | MOSFET (Metal Oxide Semiconductor) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 30 A | — |
| Pulsed Drain Current (IDM) | 110 A | [DATA_NEEDED: pulsed drain current] |
| RDS(on) at VGS=5V | 35 mOhm (typical) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (5 V drive compatible) | — |
| Total Gate Charge (Qg) | 16.7 nC | 70 nC |
| Power Dissipation (Ta) | 3.8 W | — |
| Power Dissipation (Tc) | 68 W | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Encapsulado | D2PAK (TO-263), surface mount | TO-252AA (DPAK) |
| Built-in Body Diode | Yes | — |
| Configuration | Single with built-in diode | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Switching Frequency Optimization | Below 100 kHz | — |
| Cell Structure | HEXFET planar (5th generation) | — |
| Qualification | JEDEC standard | — |
| Estado RoHS | Compliant (Pb-free) | — |
| Polarity | — | P-Channel |
| Technology | — | HEXFET (5th Generation) |
| VDS (Drain-Source Voltage) | — | -100 V |
| VGS (Gate-Source Voltage) | — | ±20 V |
| VGS(th) (Gate Threshold) | — | -2 V to -4 V |
| Continuous Drain Current (ID) at Tc=25C | — | -13 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at 100C] |
| RDS(on) max at VGS=-10V | — | 205 mΩ |
| RDS(on) typical at VGS=-10V | — | 26 mΩ (per Mouser listing for IRFR5410TRPBF) |
| Power Dissipation (Pd) at Tc=25C | — | 66 W |
| Temperatura de unión de funcionamiento | — | -55C to +150C |
| Avalanche Rated | — | Yes |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free) |