IRLZ34NSTRLPBF vs IRFR5410TRRPBF Comparaison
Comparaison détaillée côte à côte de IRLZ34NSTRLPBF par Infineon et IRFR5410TRRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRLZ34NSTRLPBF | IRFR5410TRRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,58 | $0,49 |
| FET Type | N-Channel | MOSFET (Metal Oxide Semiconductor) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 30 A | — |
| Pulsed Drain Current (IDM) | 110 A | [DATA_NEEDED: pulsed drain current] |
| RDS(on) at VGS=5V | 35 mOhm (typical) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (5 V drive compatible) | — |
| Total Gate Charge (Qg) | 16.7 nC | 70 nC |
| Power Dissipation (Ta) | 3.8 W | — |
| Power Dissipation (Tc) | 68 W | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Boîtier | D2PAK (TO-263), surface mount | TO-252AA (DPAK) |
| Built-in Body Diode | Yes | — |
| Configuration | Single with built-in diode | — |
| Type de montage | Surface Mount | Surface Mount |
| Switching Frequency Optimization | Below 100 kHz | — |
| Cell Structure | HEXFET planar (5th generation) | — |
| Qualification | JEDEC standard | — |
| Statut RoHS | Compliant (Pb-free) | — |
| Polarity | — | P-Channel |
| Technology | — | HEXFET (5th Generation) |
| VDS (Drain-Source Voltage) | — | -100 V |
| VGS (Gate-Source Voltage) | — | ±20 V |
| VGS(th) (Gate Threshold) | — | -2 V to -4 V |
| Continuous Drain Current (ID) at Tc=25C | — | -13 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at 100C] |
| RDS(on) max at VGS=-10V | — | 205 mΩ |
| RDS(on) typical at VGS=-10V | — | 26 mΩ (per Mouser listing for IRFR5410TRPBF) |
| Power Dissipation (Pd) at Tc=25C | — | 66 W |
| Température de jonction en fonctionnement | — | -55C to +150C |
| Avalanche Rated | — | Yes |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free) |