IRS2153DPBF vs IR2153PBF Vergleich

Detaillierter Direktvergleich von IRS2153DPBF von Infineon und IR2153PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRS2153DPBF IR2153PBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus NRND Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,78 $0,45
Product Type Half-Bridge Gate Driver IC Half-Bridge Gate Driver IC
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Topologie Self-Oscillating (RC-timed) Self-oscillating half-bridge with integrated RC oscillator
Anzahl der Ausgänge 2 (High-Side, Low-Side) —
Offset Voltage (High-Side) 600 V (max) —
Output Current (Source, typ) 0.18 A —
Output Current (Sink, typ) 0.26 A —
Internal Oscillator Frequency [DATA_NEEDED: oscillator frequency range] —
Dead Time (typ) 0.5 us —
Half-Bridge Driver Propagation (typ) 1.1 us —
Bootstrap FET Integrated —
VCC Supply Voltage [DATA_NEEDED: VCC range] 10 V to 15.6 V (zener clamped)
Supply Current (VCC, typ) 0.5 mA —
Shutdown Input Yes (programmable) —
Betriebs-Sperrschichttemperatur -40C to +125C —
Gehäuse 8-Pin PDIP (through-hole) 8-PDIP (0.300 inch, 7.62 mm)
MSL-Level MSL2 / MSL3 (per Infineon datasheet family note) —
Qualification Level Industrial —
RoHS-Status Compliant (Pb-free suffix) Pb-Free, RoHS compliant
Number of Drivers — 2 (high-side and low-side)
High-Side Voltage Rating — 600 V
VCC Zener Clamp — 15.6 V
Quiescent Current (Micropower Startup) — 500 uA
Rise Time (typ.) — 45 ns
Fall Time (typ.) — 80 ns
Undervoltage Lockout — Increased threshold (per datasheet)
Shutdown Feature — Yes (1/6 VCC on CT pin)
Deadtime Control — Internal, tighter initial tolerance, low temperature coefficient
Betriebstemperatur — -40C to +125C
Montageart — Through-Hole

Datenblätter & Ressourcen

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