IRS2153DPBF vs IR2153PBF 비교

다음의 상세 나란히 비교: IRS2153DPBF 제조: Infineon 및 IR2153PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRS2153DPBF IR2153PBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 NRND 활성
재고 상태 In Stock In Stock
단가 (USD) $1.78 $0.45
Product Type Half-Bridge Gate Driver IC Half-Bridge Gate Driver IC
Driver Configuration Half-Bridge (High-Side + Low-Side) —
토폴로지 Self-Oscillating (RC-timed) Self-oscillating half-bridge with integrated RC oscillator
출력 수 2 (High-Side, Low-Side) —
Offset Voltage (High-Side) 600 V (max) —
Output Current (Source, typ) 0.18 A —
Output Current (Sink, typ) 0.26 A —
Internal Oscillator Frequency [DATA_NEEDED: oscillator frequency range] —
Dead Time (typ) 0.5 us —
Half-Bridge Driver Propagation (typ) 1.1 us —
Bootstrap FET Integrated —
VCC Supply Voltage [DATA_NEEDED: VCC range] 10 V to 15.6 V (zener clamped)
Supply Current (VCC, typ) 0.5 mA —
Shutdown Input Yes (programmable) —
동작 접합 온도 -40C to +125C —
패키지 8-Pin PDIP (through-hole) 8-PDIP (0.300 inch, 7.62 mm)
MSL 레벨 MSL2 / MSL3 (per Infineon datasheet family note) —
Qualification Level Industrial —
RoHS 상태 Compliant (Pb-free suffix) Pb-Free, RoHS compliant
Number of Drivers — 2 (high-side and low-side)
High-Side Voltage Rating — 600 V
VCC Zener Clamp — 15.6 V
Quiescent Current (Micropower Startup) — 500 uA
Rise Time (typ.) — 45 ns
Fall Time (typ.) — 80 ns
Undervoltage Lockout — Increased threshold (per datasheet)
Shutdown Feature — Yes (1/6 VCC on CT pin)
Deadtime Control — Internal, tighter initial tolerance, low temperature coefficient
동작 온도 — -40C to +125C
실장 유형 — Through-Hole

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