IRS2184SPBF vs 2ED2183S06FXUMA1 Vergleich
Detaillierter Direktvergleich von IRS2184SPBF von Infineon und 2ED2183S06FXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRS2184SPBF | 2ED2183S06FXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,99 | $1,05 |
| Product Type | Half-Bridge Gate Driver IC | — |
| Configuration | High-side and Low-side referenced outputs, dependent channels | High Side, Low Side, Non-Inverting |
| Anzahl der Ausgänge | 2 | 1 (half-bridge: high-side + low-side) |
| Output Polarity | Non-Inverting | — |
| Offset Voltage (High-Side) | 600 V maximum | — |
| Peak Source Current | 1.9 A typical | — |
| Peak Sink Current | 2.3 A typical | — |
| Logic Supply Voltage (VCC) | 10 V to 20 V | — |
| Logic Input Compatibility | 3.3 V and 5 V CMOS / LSTTL | — |
| Bootstrap Supply (VBS) | 10 V to 20 V (UVLO protected) | 10 V to 20 V (typ.) |
| Propagation Delay (typ.) | [DATA_NEEDED: propagation delay matched both channels] | — |
| Betriebstemperaturbereich | -40C to +125C | — |
| Gehäuse | 8-SOIC (SOIC-8) | PG-DSO-8-53 (DSO-8) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | 2 |
| RoHS-Status | Compliant (PbF suffix indicates lead-free) | Compliant |
| Technology | Proprietary HVIC and latch-immune CMOS | SOI (Silicon-On-Insulator) |
| Driver Type | — | Half-Bridge Gate Driver |
| Number of Drivers | — | 1 |
| Maximum Offset Voltage | — | 650 V |
| Output Current (Sink/Source) | — | 2.5 A typical |
| Anstiegszeit | — | 15 ns |
| Abfallzeit | — | 15 ns |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Logic Input Voltage | — | 3.3 V / 5 V compatible (HIN, LIN) |
| Input Type | — | Non-Inverting |
| Bootstrap Diode | — | Integrated |
| Undervoltage Lockout (UVLO) | — | VCC and VBS |
| Betriebstemperatur | — | -40 C to +125 C |
| Terminal Finish | — | Tin (e3 per JESD-609) |