IRS2184SPBF vs 2ED2183S06FXUMA1 对比

详细并排对比 IRS2184SPBF 出自 Infineon 和 2ED2183S06FXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED2183S06FXUMA1 2ED2183S06FXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED2183S06FXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED2183S06FXUMA1 ✓ 量产中

规格对比

参数 IRS2184SPBF 2ED2183S06FXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.99 $1.05
Product Type Half-Bridge Gate Driver IC —
Configuration High-side and Low-side referenced outputs, dependent channels High Side, Low Side, Non-Inverting
输出数量 2 1 (half-bridge: high-side + low-side)
Output Polarity Non-Inverting —
Offset Voltage (High-Side) 600 V maximum —
Peak Source Current 1.9 A typical —
Peak Sink Current 2.3 A typical —
Logic Supply Voltage (VCC) 10 V to 20 V —
Logic Input Compatibility 3.3 V and 5 V CMOS / LSTTL —
Bootstrap Supply (VBS) 10 V to 20 V (UVLO protected) 10 V to 20 V (typ.)
Propagation Delay (typ.) [DATA_NEEDED: propagation delay matched both channels] —
工作温度范围 -40C to +125C —
封装 8-SOIC (SOIC-8) PG-DSO-8-53 (DSO-8)
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL rating] 2
RoHS 状态 Compliant (PbF suffix indicates lead-free) Compliant
Technology Proprietary HVIC and latch-immune CMOS SOI (Silicon-On-Insulator)
Driver Type — Half-Bridge Gate Driver
Number of Drivers — 1
Maximum Offset Voltage — 650 V
Output Current (Sink/Source) — 2.5 A typical
上升时间 — 15 ns
下降时间 — 15 ns
Supply Voltage (VCC) — 10 V to 20 V
Logic Input Voltage — 3.3 V / 5 V compatible (HIN, LIN)
Input Type — Non-Inverting
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — VCC and VBS
工作温度 — -40 C to +125 C
Terminal Finish — Tin (e3 per JESD-609)

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