IRS2184SPBF vs 2ED2183S06FXUMA1 Comparison

Detailed side-by-side comparison of IRS2184SPBF by Infineon and 2ED2183S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRS2184SPBF 2ED2183S06FXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Half-Bridge Gate Driver IC —
Configuration High-side and Low-side referenced outputs, dependent channels High Side, Low Side, Non-Inverting
Number of Outputs 2 1 (half-bridge: high-side + low-side)
Output Polarity Non-Inverting —
Offset Voltage (High-Side) 600 V maximum —
Peak Source Current 1.9 A typical —
Peak Sink Current 2.3 A typical —
Logic Supply Voltage (VCC) 10 V to 20 V —
Logic Input Compatibility 3.3 V and 5 V CMOS / LSTTL —
Bootstrap Supply (VBS) 10 V to 20 V (UVLO protected) 10 V to 20 V (typ.)
Propagation Delay (typ.) [DATA_NEEDED: propagation delay matched both channels] —
Operating Temperature Range -40C to +125C —
Package 8-SOIC (SOIC-8) PG-DSO-8-53 (DSO-8)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating] 2
RoHS Status Compliant (PbF suffix indicates lead-free) Compliant
Technology Proprietary HVIC and latch-immune CMOS SOI (Silicon-On-Insulator)
Driver Type — Half-Bridge Gate Driver
Number of Drivers — 1
Maximum Offset Voltage — 650 V
Output Current (Sink/Source) — 2.5 A typical
Rise Time — 15 ns
Fall Time — 15 ns
Supply Voltage (VCC) — 10 V to 20 V
Logic Input Voltage — 3.3 V / 5 V compatible (HIN, LIN)
Input Type — Non-Inverting
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — VCC and VBS
Operating Temperature — -40 C to +125 C
Terminal Finish — Tin (e3 per JESD-609)

Datasheets & Resources

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