ISC008N06LM6ATMA1 vs ISC015N06NM5ATMA1 Vergleich
Detaillierter Direktvergleich von ISC008N06LM6ATMA1 von Infineon und ISC015N06NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC008N06LM6ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,82 | $0,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 5 |
| Polarity / Channel Type | N-Channel Enhancement Mode | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 44 A | — |
| Pulsed Drain Current (ID, pulse) at Tc | 378 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 221 W | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| RDS(on) max @ VGS=10 V | [DATA_NEEDED: RDS(on) at 10 V] | — |
| Gate Threshold Voltage (VGS(th)) | Logic Level (1.0 V to 2.4 V typical) | — |
| Betriebstemperaturbereich | -55 C to +175 C (Tj) | -55 C to +175 C |
| Package Type | PG-TDSON-8 (Surface Mount) | — |
| Montagestil | Surface Mount, Tape & Reel | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| RoHS / Lead-Free Status | RoHS Compliant, Lead-Free | — |
| Halogenfrei | Yes | — |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Gehäuse | — | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Montageart | — | Surface Mount |
| Technology | — | Trench MOSFET (OptiMOS 5) |
| RoHS-Status | — | Compliant |
| MSL (Moisture Sensitivity Level) | — | 1 |