ISC009N06LM5ATMA1 vs ISC011N03L5SATMA1 Vergleich
Detaillierter Direktvergleich von ISC009N06LM5ATMA1 von Infineon und ISC011N03L5SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC009N06LM5ATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,86 | $0,47 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 5 / StrongIRFET 30 V |
| Technology | OptiMOS 5 60V N-channel trench MOSFET | OptiMOS 5 trench MOSFET |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at Ta | 41 A | — |
| Continuous Drain Current (ID) at Tc | 348 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: VGS threshold typical] | — |
| On-Resistance RDS(on) max at VGS=10V | 0.9 mOhm | — |
| Power Dissipation at Ta (PD) | 3 W | — |
| Power Dissipation at Tc (PD) | 214 W | — |
| Betriebstemperaturbereich | -55 C to +175 C | — |
| Gehäuse | PG-TSON-8-3 (SuperSO8 5x6) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Continuous Drain Current (ID) @ Ta=25C | — | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 100 A |
| Power Dissipation (PD) @ Ta=25C | — | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | — | 96 W |
| Betriebstemperatur | — | -55 C to +175 C (TJ) |
| Gate Drive | — | Logic-level compatible |