ISC009N06LM5ATMA1 vs ISC011N06LM5ATMA1 Vergleich
Detaillierter Direktvergleich von ISC009N06LM5ATMA1 von Infineon und ISC011N06LM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC009N06LM5ATMA1 | ISC011N06LM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,86 | $0,74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Technology | OptiMOS 5 60V N-channel trench MOSFET | OptiMOS 5 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Ta | 41 A | 37 A |
| Continuous Drain Current (ID) at Tc | 348 A | 288 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: VGS threshold typical] | — |
| On-Resistance RDS(on) max at VGS=10V | 0.9 mOhm | — |
| Power Dissipation at Ta (PD) | 3 W | — |
| Power Dissipation at Tc (PD) | 214 W | — |
| Betriebstemperaturbereich | -55 C to +175 C | -55C to +175C |
| Gehäuse | PG-TSON-8-3 (SuperSO8 5x6) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| RoHS-Status | Compliant | Compliant |
| Part Number | — | ISC011N06LM5ATMA1 |
| Polarity / Channel Type | — | N-Channel |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 188 W |
| RDS(on) max at VGS=10V | — | 1.15 mOhm |
| Pin-Anzahl | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |