ISC009N06NM6ATMA1 vs IQEH50NE2LM7ZCGATMA1 Vergleich
Detaillierter Direktvergleich von ISC009N06NM6ATMA1 von Infineon und IQEH50NE2LM7ZCGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | ISC009N06NM6ATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,68 | $1,42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60 V | OptiMOS 7 Power-Transistor |
| Transistortyp | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta=25C | 40 A | — |
| Pulsed Drain Current (IDM) at Tc=25C | 344 A | — |
| Power Dissition (PD) at Ta=25C | 3 W | — |
| Power Dissipation (PD) at Tc=25C | 221 W | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| RDS(on) max @ VGS=10 V | [DATA_NEEDED: RDS(on) typical value at VGS=10 V] | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typical value] | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55 degrees C to +175 degrees C |
| Gehäuse | PG-TDSON-8 (3.3 x 3.3 mm) | PG-TTFN-9-3 |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | Compliant |
| Halogenfrei | Yes | — |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 status] | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds) Max | — | 25 V |
| Continuous Drain Current (Ta) | — | 54 A |
| Continuous Drain Current (Tc) | — | 422 A |
| Maximum On-Resistance (Rds(on)) | — | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.7 V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 150 W |
| Maximum Junction Temperature | — | +175 degrees C |
| Technology | — | OptiMOS 7 (Trench-Gate) |
| Qualification | — | Industrial grade per Infineon datasheet |