ISC009N06NM6ATMA1 vs IQEH50NE2LM7ZCGATMA1 Comparison
Detailed side-by-side comparison of ISC009N06NM6ATMA1 by Infineon and IQEH50NE2LM7ZCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH50NE2LM7ZCGATMA1
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 β ActiveSpecification Comparison
| Parameter | ISC009N06NM6ATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $1.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60 V | OptiMOS 7 Power-Transistor |
| Transistor Type | N-Channel MOSFET | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Ta=25C | 40 A | β |
| Pulsed Drain Current (IDM) at Tc=25C | 344 A | β |
| Power Dissition (PD) at Ta=25C | 3 W | β |
| Power Dissipation (PD) at Tc=25C | 221 W | β |
| Gate-to-Source Voltage (VGS) | Β±20 V | β |
| RDS(on) max @ VGS=10 V | [DATA_NEEDED: RDS(on) typical value at VGS=10 V] | β |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typical value] | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55 degrees C to +175 degrees C |
| Package | PG-TDSON-8 (3.3 x 3.3 mm) | PG-TTFN-9-3 |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 status] | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (Vds) Max | β | 25 V |
| Continuous Drain Current (Ta) | β | 54 A |
| Continuous Drain Current (Tc) | β | 422 A |
| Maximum On-Resistance (Rds(on)) | β | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 1.7 V |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 150 W |
| Maximum Junction Temperature | β | +175 degrees C |
| Technology | β | OptiMOS 7 (Trench-Gate) |
| Qualification | β | Industrial grade per Infineon datasheet |