ISC011N03L5SATMA1 vs ISC009N06LM5ATMA1 Vergleich
Detaillierter Direktvergleich von ISC011N03L5SATMA1 von Infineon und ISC009N06LM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC011N03L5SATMA1 | ISC009N06LM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,47 | $2,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 / StrongIRFET 30 V | OptiMOS 5 |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) @ Ta=25C | 37 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 100 A | — |
| Power Dissipation (PD) @ Ta=25C | 2.5 W | — |
| Power Dissipation (PD) @ Tc=25C | 96 W | — |
| Gehäuse | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) | PG-TSON-8-3 (SuperSO8 5x6) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55 C to +175 C (TJ) | — |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 5 60V N-channel trench MOSFET |
| Gate Drive | Logic-level compatible | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Continuous Drain Current (ID) at Ta | — | 41 A |
| Continuous Drain Current (ID) at Tc | — | 348 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS maximum rating] |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: VGS threshold typical] |
| On-Resistance RDS(on) max at VGS=10V | — | 0.9 mOhm |
| Power Dissipation at Ta (PD) | — | 3 W |
| Power Dissipation at Tc (PD) | — | 214 W |
| Betriebstemperaturbereich | — | -55 C to +175 C |