ISC011N04NM7VATMA1 vs BSC340N08NS3GATMA1 Vergleich

Detaillierter Direktvergleich von ISC011N04NM7VATMA1 von Infineon und BSC340N08NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ISC011N04NM7VATMA1 BSC340N08NS3GATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,41 $0,81
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor —
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID) at TA=25°C 38 A —
Continuous Drain Current (ID) at TC 256 A —
On-Resistance RDS(on) max @ VGS=10V 1.1 mΩ —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 136 W —
Gate Threshold Voltage (Vth) Up to 3.2 V —
Technology Trench MOSFET, silicon OptiMOS 3 (N-Channel Trench)
Gehäuse PG-TDSON-8 (source-down) PG-TDSON-8-5 (SuperSO8 5x6)
Montageart Surface Mount Surface Mount
Short-Circuit Withstand Yes (current-limited) —
Betriebstemperaturbereich -55 °C to +175 °C (TJ) -55C to +150C
RoHS Compliance Compliant (per Infineon product page) —
MSL-Level MSL 1 (per JEDEC J-STD-020) 1
Part Number — BSC340N08NS3GATMA1
Continuous Drain Current (ID, Tc) — 23 A
Continuous Drain Current (ID, Ta) — 7 A
Pulsed Drain Current (IDM) — 92 A
On-State Resistance RDS(on) max @ VGS=10V — 34 mOhm
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage VGS max — +/- 20 V
Power Dissipation (Tc) — 32 W
Power Dissipation (Ta) — 2.5 W
RoHS / Lead-Free — RoHS compliant, lead-free
Channel Type — Single N-Channel
Total Gate Charge Qg typ — [DATA_NEEDED: Qg typical]
Avalanche Rating — Repetitive avalanche rated

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