ISC011N04NM7VATMA1 vs BSC340N08NS3GATMA1 比較
詳細な並列比較: ISC011N04NM7VATMA1 メーカー: Infineon および BSC340N08NS3GATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | ISC011N04NM7VATMA1 | BSC340N08NS3GATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.41 | $0.81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | — |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | OptiMOS 3 (N-Channel Trench) |
| パッケージ | PG-TDSON-8 (source-down) | PG-TDSON-8-5 (SuperSO8 5x6) |
| 実装タイプ | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | — |
| 動作温度範囲 | -55 °C to +175 °C (TJ) | -55C to +150C |
| RoHS Compliance | Compliant (per Infineon product page) | — |
| MSLレベル | MSL 1 (per JEDEC J-STD-020) | 1 |
| Part Number | — | BSC340N08NS3GATMA1 |
| Continuous Drain Current (ID, Tc) | — | 23 A |
| Continuous Drain Current (ID, Ta) | — | 7 A |
| Pulsed Drain Current (IDM) | — | 92 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 34 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Power Dissipation (Tc) | — | 32 W |
| Power Dissipation (Ta) | — | 2.5 W |
| RoHS / Lead-Free | — | RoHS compliant, lead-free |
| Channel Type | — | Single N-Channel |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg typical] |
| Avalanche Rating | — | Repetitive avalanche rated |