ISC015N04NM5ATMA1 vs IAUC100N04S6L025ATMA1 Vergleich

Detaillierter Direktvergleich von ISC015N04NM5ATMA1 von Infineon und IAUC100N04S6L025ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUC100N04S6L025ATMA1 IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter ISC015N04NM5ATMA1 IAUC100N04S6L025ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,98 $0,62
Manufacturer Infineon Technologies —
Series OptiMOS 5 40V Normal Level —
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) OptiMOS 6 40V trench MOSFET
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 3.4 V (typ) —
R_DS(on) max 1.5 mOhm @ VGS=10 V, ID=50 A —
Continuous Drain Current (ID) at Ta=25C 33 A —
Continuous Drain Current (ID) at Tc=25C 206 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] [DATA_NEEDED: IDM pulse rating]
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 115 W —
Betriebstemperaturbereich -55 C to +175 C (junction, per OptiMOS 5) —
Gehäuse / Bauform PG-TDSON-8 FL (SuperSO8 5x6 mm) —
Montageart Surface Mount Surface Mount
Pin-Anzahl 8 —
RoHS-Status Compliant Compliant
MSL-Level 1 (per Infineon SuperSO8 family) 1 (per JEDEC J-STD-020)
Drive Level Normal Level (VGS(th) ~3.4 V) —
Polarity — N-Channel
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-State Resistance RDS(on) max at VGS=10V — 2.5 mOhm
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Power Dissipation (PD) at TC=25C — 62 W
Betriebs-Sperrschichttemperatur — -55 C to +175 C
Gehäuse — PG-TDSON-8 (SuperSO8 5x6 mm)
Automotive Qualification — AEC-Q101 qualified
Lead-Free — Yes

Datenblätter & Ressourcen

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