ISC015N04NM5ATMA1 vs IAUC100N04S6L025ATMA1 Comparación
Comparación detallada lado a lado de ISC015N04NM5ATMA1 por Infineon y IAUC100N04S6L025ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISC015N04NM5ATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,98 | $0,62 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 40V Normal Level | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 6 40V trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 3.4 V (typ) | — |
| R_DS(on) max | 1.5 mOhm @ VGS=10 V, ID=50 A | — |
| Continuous Drain Current (ID) at Ta=25C | 33 A | — |
| Continuous Drain Current (ID) at Tc=25C | 206 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | [DATA_NEEDED: IDM pulse rating] |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 115 W | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C (junction, per OptiMOS 5) | — |
| Encapsulado / Carcasa | PG-TDSON-8 FL (SuperSO8 5x6 mm) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (per Infineon SuperSO8 family) | 1 (per JEDEC J-STD-020) |
| Drive Level | Normal Level (VGS(th) ~3.4 V) | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-State Resistance RDS(on) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at TC=25C | — | 62 W |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Encapsulado | — | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free | — | Yes |