ISC015N04NM5ATMA1 vs ISC0703NLSATMA1 Vergleich

Detaillierter Direktvergleich von ISC015N04NM5ATMA1 von Infineon und ISC0703NLSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ISC015N04NM5ATMA1 ISC0703NLSATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,98 $0,51
Manufacturer Infineon Technologies —
Series OptiMOS 5 40V Normal Level —
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) Trench MOSFET (OptiMOS family)
Drain-Source Voltage (VDS) 40 V 60 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 3.4 V (typ) [DATA_NEEDED: VGS(th) typical and min/max]
R_DS(on) max 1.5 mOhm @ VGS=10 V, ID=50 A —
Continuous Drain Current (ID) at Ta=25C 33 A 13 A
Continuous Drain Current (ID) at Tc=25C 206 A 57 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 115 W —
Betriebstemperaturbereich -55 C to +175 C (junction, per OptiMOS 5) -55C to +150C (junction)
Gehäuse / Bauform PG-TDSON-8 FL (SuperSO8 5x6 mm) —
Montageart Surface Mount Surface Mount
Pin-Anzahl 8 —
RoHS-Status Compliant Compliant
MSL-Level 1 (per Infineon SuperSO8 family) [DATA_NEEDED: MSL level]
Drive Level Normal Level (VGS(th) ~3.4 V) —
Polarity / Channel Type — N-Channel
Power Dissipation (PD) at Ta=25C — 3 W
Power Dissipation (PD) at Tc=25C — 44 W
Gehäuse — PG-TDSON-8 (5x6 mm)
Standard Package Quantity — 5,000 (reel)
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Avalanche Energy (EAS) — [DATA_NEEDED: EAS rating]

Datenblätter & Ressourcen

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