ISC015N06NM5ATMA1 vs BSC028N06NSTATMA1 Vergleich

Detaillierter Direktvergleich von ISC015N06NM5ATMA1 von Infineon und BSC028N06NSTATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ISC015N06NM5ATMA1 BSC028N06NSTATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,62 $0,40
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TA=25C 33 A 24 A
Pulsed Drain Current (IDM) at TC=25C 259 A —
On-Resistance RDS(on) typical at VGS=10V 1.5 mOhm —
Total Power Dissipation (TA) 3 W —
Total Power Dissipation (TC) 188 W —
Gehäuse PG-TDSON-8 (PQFN 5x6) Drain-Down PG-TDSON-8-7 (SuperSO8, 5x6 mm)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55 C to +175 C —
Technology Trench MOSFET (OptiMOS 5) MOSFET N-Channel (OptiMOS 5)
RoHS-Status Compliant Compliant
MSL (Moisture Sensitivity Level) 1 —
Series — OptiMOS 5
Part Number Base — BSC028N06NS
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.5 V to 3.5 V
Total Gate Charge Qg — 37 nC @ VGS=10V
Input Capacitance Ciss — 3000 nC [DATA_NEEDED: confirm exact pF from datasheet]
Output Capacitance Coss — 825 pF
Reverse Transfer Capacitance Crss — 56 pF
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 100 W
Betriebs-Sperrschichttemperatur — -55C to +175C
Halogenfrei — Yes
MSL-Level — 1
AEC-Q101 Automotive Qualified — [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ]

Datenblätter & Ressourcen

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