ISC015N06NM5ATMA1 vs BSC028N06NSTATMA1 对比
详细并排对比 ISC015N06NM5ATMA1 出自 Infineon 和 BSC028N06NSTATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC015N06NM5ATMA1 | BSC028N06NSTATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $0.40 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA=25C | 33 A | 24 A |
| Pulsed Drain Current (IDM) at TC=25C | 259 A | — |
| On-Resistance RDS(on) typical at VGS=10V | 1.5 mOhm | — |
| Total Power Dissipation (TA) | 3 W | — |
| Total Power Dissipation (TC) | 188 W | — |
| 封装 | PG-TDSON-8 (PQFN 5x6) Drain-Down | PG-TDSON-8-7 (SuperSO8, 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +175 C | — |
| Technology | Trench MOSFET (OptiMOS 5) | MOSFET N-Channel (OptiMOS 5) |
| RoHS 状态 | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | 1 | — |
| Series | — | OptiMOS 5 |
| Part Number Base | — | BSC028N06NS |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V to 3.5 V |
| Total Gate Charge Qg | — | 37 nC @ VGS=10V |
| Input Capacitance Ciss | — | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] |
| Output Capacitance Coss | — | 825 pF |
| Reverse Transfer Capacitance Crss | — | 56 pF |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 100 W |
| 工作结温 | — | -55C to +175C |
| 无卤 | — | Yes |
| MSL 等级 | — | 1 |
| AEC-Q101 Automotive Qualified | — | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] |