ISC016N08NM8SCATMA1 vs IAUCN08S7L033ATMA1 Vergleich
Detaillierter Direktvergleich von ISC016N08NM8SCATMA1 von Infineon und IAUCN08S7L033ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISC016N08NM8SCATMA1 - 80V OptiMOS 8 N-Channel MOSFET | Infineon
ISC016N08NM8SCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | ISC016N08NM8SCATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,72 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 8 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current at TA=25°C (ID) | 29 A | — |
| Continuous Drain Current at TC=25°C (ID) | 269 A | — |
| Power Dissipation at TC=25°C (PD) | 263 W | — |
| Gehäuse | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 8 (shield-gate trench) | OptiMOS 7 trench MOSFET |
| Betriebstemperaturbereich | -55C to +175C | -55°C to +175°C (TJ) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg @ VGS=10V] | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for this package) |
| Drain Tab Connection | Top + bottom exposed (dual-side cooling) | — |
| Series | — | Automotive OptiMOS 7 |
| Transistortyp | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |