ISC016N08NM8SCATMA1 vs IAUCN08S7L033ATMA1 Comparación
Comparación detallada lado a lado de ISC016N08NM8SCATMA1 por Infineon y IAUCN08S7L033ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISC016N08NM8SCATMA1 - 80V OptiMOS 8 N-Channel MOSFET | Infineon
ISC016N08NM8SCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISC016N08NM8SCATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,72 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 8 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current at TA=25°C (ID) | 29 A | — |
| Continuous Drain Current at TC=25°C (ID) | 269 A | — |
| Power Dissipation at TC=25°C (PD) | 263 W | — |
| Encapsulado | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | OptiMOS 8 (shield-gate trench) | OptiMOS 7 trench MOSFET |
| Rango de temperatura de funcionamiento | -55C to +175C | -55°C to +175°C (TJ) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg @ VGS=10V] | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for this package) |
| Drain Tab Connection | Top + bottom exposed (dual-side cooling) | — |
| Series | — | Automotive OptiMOS 7 |
| Tipo de transistor | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |