ISC016N08NM8SCATMA1 vs IAUCN08S7L033ATMA1 Comparison
Detailed side-by-side comparison of ISC016N08NM8SCATMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC016N08NM8SCATMA1
ISC016N08NM8SCATMA1 - 80V OptiMOS 8 N-Channel MOSFET | Infineon
ISC016N08NM8SCATMA1 β ActiveInfineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β ActiveSpecification Comparison
| Parameter | ISC016N08NM8SCATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.72 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 8 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current at TA=25Β°C (ID) | 29 A | β |
| Continuous Drain Current at TC=25Β°C (ID) | 269 A | β |
| Power Dissipation at TC=25Β°C (PD) | 263 W | β |
| Package | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 8 (shield-gate trench) | OptiMOS 7 trench MOSFET |
| Operating Temperature Range | -55C to +175C | -55Β°C to +175Β°C (TJ) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg @ VGS=10V] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for this package) |
| Drain Tab Connection | Top + bottom exposed (dual-side cooling) | β |
| Series | β | Automotive OptiMOS 7 |
| Transistor Type | β | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | β | 3.3 mΞ© |
| Continuous Drain Current (ID) at Tj | β | 130 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25Β°C | β | 118 W |
| Gate-Source Voltage (VGS) max | β | Β±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | β | Automotive Grade (per Infineon datasheet header) |