ISC017N04NM5ATMA1 vs ISC011N04NM7VATMA1 Vergleich
Detaillierter Direktvergleich von ISC017N04NM5ATMA1 von Infineon und ISC011N04NM7VATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC017N04NM5ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 31 A | — |
| Continuous Drain Current (ID) at TC=25C | 193 A | — |
| On-Resistance RDS(on) at VGS=10V, ID=50A | 1.7 mOhm | — |
| Gate Threshold Voltage VGS(th) typ. | 3.4 V | — |
| Gate Charge Qg at VGS=10V | 67 nC | — |
| Input Capacitance Ciss at VDS=20V | 4800 pF | — |
| Power Dissipation at TA=25C | 3 W | — |
| Power Dissipation at TC=25C | 115 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gehäuse | PG-TDSON-8 FL (5x6 mm) | PG-TDSON-8 (source-down) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Technology | — | Trench MOSFET, silicon |
| Short-Circuit Withstand | — | Yes (current-limited) |
| Betriebstemperaturbereich | — | -55 °C to +175 °C (TJ) |
| RoHS Compliance | — | Compliant (per Infineon product page) |