ISC019N08NM7ATMA1 vs BSC019N08NS5ATMA1 Vergleich
Detaillierter Direktvergleich von ISC019N08NM7ATMA1 von Infineon und BSC019N08NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC019N08NM7ATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $1,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | Trench MOSFET (OptiMOS 7) | OptiMOS 5 (N-channel trench) |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Drain Current (ID), TC=25°C | 209 A | — |
| Drain Current (ID), TA=25°C | 26 A | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 1.9 mΩ | — |
| Power Dissipation (PD), TC=25°C | 188 W | — |
| Power Dissipation (PD), TA=25°C | 3 W (6 cm² FR4) | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-TDSON-8-43 (SuperSO8) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Halogenfrei | Yes | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 |
| Gate Threshold VGS(th) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge QG | [DATA_NEEDED: QG] | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at TA=25C | — | 28 A |
| Continuous Drain Current (ID) at TC=25C | — | 237 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | — | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.0 V |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 214 W |
| Betriebstemperaturbereich | — | -55 C to +150 C |
| Avalanche Rated | — | Yes |