ISC019N08NM7ATMA1 vs BSC019N08NS5ATMA1 Comparison
Detailed side-by-side comparison of ISC019N08NM7ATMA1 by Infineon and BSC019N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N08NS5ATMA1
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | ISC019N08NM7ATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | Trench MOSFET (OptiMOS 7) | OptiMOS 5 (N-channel trench) |
| Drain-to-Source Voltage (VDS) | 80 V | β |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | β |
| Drain Current (ID), TC=25Β°C | 209 A | β |
| Drain Current (ID), TA=25Β°C | 26 A | β |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | β |
| On-Resistance RDS(on) typ @ VGS=10V | 1.9 mΞ© | β |
| Power Dissipation (PD), TC=25Β°C | 188 W | β |
| Power Dissipation (PD), TA=25Β°C | 3 W (6 cmΒ² FR4) | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-43 (SuperSO8) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Halogen-Free | Yes | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Gate Threshold VGS(th) | [DATA_NEEDED: VGS(th)] | β |
| Total Gate Charge QG | [DATA_NEEDED: QG] | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at TA=25C | β | 28 A |
| Continuous Drain Current (ID) at TC=25C | β | 237 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | β | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 3.0 V |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | β | 3 W |
| Power Dissipation (TC=25C) | β | 214 W |
| Operating Temperature Range | β | -55 C to +150 C |
| Avalanche Rated | β | Yes |