ISC019N08NM7ATMA1 vs ISC151N08NM6ATMA1 Vergleich
Detaillierter Direktvergleich von ISC019N08NM7ATMA1 von Infineon und ISC151N08NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC019N08NM7ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $0,78 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Trench MOSFET (OptiMOS 7) | OptiMOS 6 |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Drain Current (ID), TC=25°C | 209 A | — |
| Drain Current (ID), TA=25°C | 26 A | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 1.9 mΩ | — |
| Power Dissipation (PD), TC=25°C | 188 W | — |
| Power Dissipation (PD), TA=25°C | 3 W (6 cm² FR4) | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-TDSON-8-43 (SuperSO8) | PG-TDSON-8 FL |
| Montageart | Surface Mount | Surface Mount |
| Halogenfrei | Yes | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| Gate Threshold VGS(th) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge QG | [DATA_NEEDED: QG] | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Kontinuierlicher Drain-Strom (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Anzahl der Pins | — | 8 |
| Channel Mode | — | Enhancement |
| Betriebstemperatur | — | -55 °C to +175 °C |