ISC025N08NM5LF2ATMA1 vs ISC011N04NM7VATMA1 Vergleich

Detaillierter Direktvergleich von ISC025N08NM5LF2ATMA1 von Infineon und ISC011N04NM7VATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
ISC025N08NM5LF2ATMA1 ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter ISC025N08NM5LF2ATMA1 ISC011N04NM7VATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,74 $0,41
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide), OptiMOS 5 LF2 Trench MOSFET, silicon
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) @ TA=25°C 23 A —
Continuous Drain Current (ID) @ TC=25°C 198 A —
On-Resistance (RDS(on)) Max 2.55 mΩ —
Gate-Source Threshold (VGS(th)) Max 3.9 V —
Total Gate Charge (Qg) Max 96 nC —
Power Dissipation @ TA 3 W —
Power Dissipation @ TC 217 W —
Gehäuse PG-TDSON-8 FL (Surface Mount) PG-TDSON-8 (source-down)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] -55 °C to +175 °C (TJ)
Polarity N-Channel —
RoHS-Status Compliant —
Ordering Code Suffix ATMA1 (Tape & Reel, 13-inch) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 Power-Transistor
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Short-Circuit Withstand — Yes (current-limited)
RoHS Compliance — Compliant (per Infineon product page)
MSL-Level — MSL 1 (per JEDEC J-STD-020)

Datenblätter & Ressourcen

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