ISC025N08NM5LF2ATMA1 vs ISC011N04NM7VATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC025N08NM5LF2ATMA1 disebabkan oleh Infineon dan ISC011N04NM7VATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISC025N08NM5LF2ATMA1 ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISC025N08NM5LF2ATMA1 ISC011N04NM7VATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide), OptiMOS 5 LF2 Trench MOSFET, silicon
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) @ TA=25°C 23 A —
Continuous Drain Current (ID) @ TC=25°C 198 A —
On-Resistance (RDS(on)) Max 2.55 mΩ —
Gate-Source Threshold (VGS(th)) Max 3.9 V —
Total Gate Charge (Qg) Max 96 nC —
Power Dissipation @ TA 3 W —
Power Dissipation @ TC 217 W —
Kemasan PG-TDSON-8 FL (Surface Mount) PG-TDSON-8 (source-down)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] -55 °C to +175 °C (TJ)
Polarity N-Channel —
Status RoHS Compliant —
Ordering Code Suffix ATMA1 (Tape & Reel, 13-inch) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 Power-Transistor
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Short-Circuit Withstand — Yes (current-limited)
RoHS Compliance — Compliant (per Infineon product page)
Aras MSL — MSL 1 (per JEDEC J-STD-020)

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