ISC028N03LF2SATMA1 vs ISC033N03LF2SATMA1 Vergleich
Detaillierter Direktvergleich von ISC028N03LF2SATMA1 von Infineon und ISC033N03LF2SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC028N03LF2SATMA1 | ISC033N03LF2SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,86 | $0,81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 30V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 128 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | 2.35 V |
| Power Dissipation at TA | 3 W | — |
| Power Dissipation at TC | 83 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-TDSON-8-62 (Source-Down, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| MPN | — | ISC033N03LF2SATMA1 |
| Part Family | — | OptiMOS LF2 (<= 40V) |
| Transistortyp | — | N-Channel MOSFET |
| Technology | — | OptiMOS trench (<= 40V) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TC | — | 108 A |
| Continuous Drain Current (ID) at TA | — | 22 A |
| Maximum On-Resistance RDS(on) max | — | 3.3 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at TA | — | 3 W |
| Power Dissipation (PD) at TC | — | 71 W |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| Junction Temperature (TJ) max | — | [DATA_NEEDED: junction temperature max] |
| Configuration | — | Single N-channel, source-down |
| RoHS-Status | — | Compliant |