ISC028N03LF2SATMA1 vs ISC033N03LF2SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC028N03LF2SATMA1 sa pamamagitan ng Infineon at ISC033N03LF2SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC028N03LF2SATMA1 | ISC033N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 30V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 128 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | 2.35 V |
| Power Dissipation at TA | 3 W | — |
| Power Dissipation at TC | 83 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Packhaging | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-TDSON-8-62 (Source-Down, 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| MPN | — | ISC033N03LF2SATMA1 |
| Part Family | — | OptiMOS LF2 (<= 40V) |
| Uri ng Transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS trench (<= 40V) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TC | — | 108 A |
| Continuous Drain Current (ID) at TA | — | 22 A |
| Maximum On-Resistance RDS(on) max | — | 3.3 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at TA | — | 3 W |
| Power Dissipation (PD) at TC | — | 71 W |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| Junction Temperature (TJ) max | — | [DATA_NEEDED: junction temperature max] |
| Configuration | — | Single N-channel, source-down |
| Tindminan RoHS | — | Compliant |