ISC030N12NM6ATMA1 vs ISC015N06NM5ATMA1 Vergleich
Detaillierter Direktvergleich von ISC030N12NM6ATMA1 von Infineon und ISC015N06NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC030N12NM6ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,62 | $0,62 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS 6 (trench) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS max) | 120 V | — |
| Continuous Drain Current (ID, Tc=25 C) | 194 A | — |
| Continuous Drain Current (ID, Ta) | 21 A | — |
| On-Resistance RDS(on) max | 3.4 mOhm @ VGS=10 V | — |
| On-Resistance RDS(on) typical | 3.0 mOhm @ VGS=10 V | — |
| Verlustleistung (TC=25°C) | 250 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Gehäuse | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55 C to +175 C (junction) | — |
| Gate Drive Voltage (recommended) | 10 V (full RDS(on)) | — |
| Configuration | Single N-channel, source-down | — |
| Packaging (suffix) | Tape & Reel (ATMA1) | — |
| RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Betriebstemperaturbereich | — | -55 C to +175 C |
| RoHS-Status | — | Compliant |
| MSL (Moisture Sensitivity Level) | — | 1 |