ISC030N12NM6ATMA1 - 120V 194A OptiMOS 6 N-Ch MOSFET | Infineon
Teilenummer: ISC030N12NM6ATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $3.42 | $3,42 |
| 10 | $3.07 | $30,70 |
| 100 | $2.61 | $261,00 |
| 500 | $2.18 | $1.090,00 |
| 1.000 | $1.84 | $1.840,00 |
| 5.000 | $1.62 | $8.100,00 |
ISC030N12NM6ATMA1 Übersicht
An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device where a positive gate-to-source voltage creates an inversion layer that conducts current between drain and source. OptiMOS 6 is Infineon's sixth-generation trench MOSFET platform optimized for low FOM (figure of merit), combining low RDS(on) with low Qg/Qrr to minimize both conduction and switching losses in high-frequency SMPS, motor-control, and OR-ing applications. The N-channel variant requires a positive VGS to turn on, and the "NM6" suffix in the part number identifies the family generation.
Key features include a maximum RDS(on) of 3.4 mOhm at VGS = 10 V, low Qg typical of OptiMOS 6 for fast switching, and a single N-channel source-down package (PG-TSON-8-3 / SuperSO8 5x6) that exposes the die on the bottom thermal pad for direct PCB cooling. The "030" in the part number indicates the RDS(on) class (3.0 mOhm typical), and the ATMA1 suffix designates tape-and-reel packaging for high-volume assembly. The die uses Infineon's latest trench-cell architecture to balance cell density against ruggedness.
Typical applications include high-frequency DC-DC converters (synchronous rectification side), 48 V automotive e-fuse and battery protection, OR-ing and hot-swap controllers, server/telecom point-of-load conversion, and high-current BLDC motor drives. The 120 V rating gives generous headroom over 80 V automotive load-dump transients and 48 V telecom rails. The low Qrr and Qoss figures also make this part attractive for hard- and soft-switched topologies running above 100 kHz.
Designers should pay close attention to gate-drive voltage: OptiMOS 6 120 V parts are specified for full RDS(on) at VGS = 10 V. Driving at 4.5 V works but increases on-resistance. The PG-TSON-8-3 footprint requires substantial PCB copper pours (or a thermal via array under the exposed pad) to realize the rated 250 W dissipation. A snubber or gate-resistance tuning is recommended for hard-switched bridges to control dV/dt ringing on the source inductance.
Drop-in-Alternativen für ISC030N12NM6ATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit ISC030N12NM6ATMA1 (gleiche Bauform und Footprint) – abweichend in Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Product Family.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
ISC151N08NM6ATMA1
✅ Drop-In✓ Auf Lager
$0.78 / Stück
Datenblatt ansehen →ISC015N06NM5ATMA1
✅ Drop-In✓ Auf Lager
$0.62 / Stück
Datenblatt ansehen →ISC028N03LF2SATMA1
✅ Drop-In✓ Auf Lager
$0.86 / Stück
Datenblatt ansehen →ISC045N03L5SATMA1
✅ Drop-In✓ Auf Lager
$0.51 / Stück
Datenblatt ansehen →ISC011N04NM7VATMA1
✅ Drop-In✓ Auf Lager
$0.41 / Stück
Datenblatt ansehen →VBGQA1103
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
ISC030N12NM6ATMA1 Grenzwerte & elektrische Eigenschaften
| Transistortyp | N-Channel MOSFET |
| Technology | OptiMOS 6 (trench) |
| Drain-Source Voltage (VDS max) | 120 V |
| Continuous Drain Current (ID, Tc=25 C) | 194 A |
| Continuous Drain Current (ID, Ta) | 21 A |
| On-Resistance RDS(on) max | 3.4 mOhm @ VGS=10 V |
| On-Resistance RDS(on) typical | 3.0 mOhm @ VGS=10 V |
| Verlustleistung (TC=25°C) | 250 W |
| Power Dissipation (Ta) | 3 W |
| Gehäuse | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount |
| Betriebstemperatur | -55 C to +175 C (junction) |
| Gate Drive Voltage (recommended) | 10 V (full RDS(on)) |
| Configuration | Single N-channel, source-down |
| Packaging (suffix) | Tape & Reel (ATMA1) |
| RoHS | Compliant |
ISC030N12NM6ATMA1 Pin-Konfiguration
| Pin 1 | Source — Source terminal (low-side return) |
| Pin 2 | Source — Source terminal (low-side return) |
| Pin 3 | Source — Source terminal; shared with exposed thermal pad |
| Pin 4 | Gate — Gate drive input (10 V recommended for full RDS(on)) |
| Pin 5 | Drain — Drain terminal (high-voltage) |
| Pin 6 | Drain — Drain terminal (high-voltage) |
| Pin 7 | Drain — Drain terminal (high-voltage) |
| Pin 8 | Drain — Drain terminal (high-voltage) |
Sicherer Arbeitsbereich (DC, Tc=25 C)
Typische Anwendungen
ISC030N12NM6ATMA1 ist geeignet für 6 Anwendungs: 48 V Automotive E-Fuse and Battery Protection, High-Frequency Synchronous Rectification (DC-DC), 48 V Telecom OR-ing and Hot-Swap, Server and Datacenter Point-of-Load Conversion, High-Current BLDC Motor Drive (Industrial), Solar Inverter Boost / Buck Stage.
48 V Automotive E-Fuse and Battery Protection
The ISC030N12NM6ATMA1 fits 48 V mild-hybrid and battery-protection e-fuse stages because its 120 V VDS rating gives 30 %+ headroom over an 80 V load-dump transient, while its 194 A continuous drain current (Tc) handles inrush and short-circuit let-through without thermal runaway. The 3.0 mOhm typical RDS(on) keeps conduction loss under 10 W at 50 A continuous, and the PG-TSON-8-3 source-down package dissipates heat directly into the chassis copper pour. Designers typically place it as the low-side disconnect switch driven by a gate-driver IC such as 1ED3124MC12HXUMA1 with a 10 V supply.
Empfohlen
High-Frequency Synchronous Rectification (DC-DC)
For high-current synchronous-rectifier positions in 48 V to point-of-load converters, the ISC030N12NM6ATMA1 is attractive because OptiMOS 6 combines 3.0 mOhm RDS(on) with low Qrr and Qoss, minimizing both conduction and body-diode reverse-recovery loss at 100 to 500 kHz switching frequencies. The 120 V VDS supports 48 V nominal rails plus inductive overshoot. Designers use it on the secondary side of an LLC or hard-switched buck with a digital controller such as XDPP1140100BXUMA1 to achieve >98 % efficiency.
Empfohlen
48 V Telecom OR-ing and Hot-Swap
The ISC030N12NM6ATMA1 is well suited to 48 V telecom OR-ing and hot-swap controllers where two power sources share a load and must be isolated during fault or hot-insertion events. Its 120 V rating covers the full -36 V to -75 V telecom range with margin, and its 3.0 mOhm RDS(on) minimizes voltage drop across the OR-ing FET, preserving efficiency at 30 to 60 A load current. The PG-TSON-8-3 footprint matches industry-standard SuperSO8 OR-ing layouts. Pair it with a hot-swap controller such as TLD5191ESXUMA1 for current-limiting and timed turn-on.
Empfohlen
Server and Datacenter Point-of-Load Conversion
In server and datacom 48 V-to-POL converters delivering 200 to 600 W to CPUs and GPUs, the ISC030N12NM6ATMA1 operates as the primary-side switch with 120 V rating matching a 48 V nominal bus plus 20 % transient headroom. The low Qg of OptiMOS 6 keeps gate-drive losses small even at 200 kHz switching, and the SuperSO8 source-down footprint allows tight paralleling for higher current rails. Use it with XDPE12284C0000XUMA1 digital controller for telemetry and adaptive dead-time control to maximize efficiency.
Empfohlen
High-Current BLDC Motor Drive (Industrial)
The ISC030N12NM6ATMA1 fits industrial BLDC motor-drive half-bridges operating from 48 to 96 VDC bus with continuous phase currents up to 50 A. The 120 V rating tolerates back-EMF during fast deceleration, and the 194 A peak capability handles locked-rotor inrush. The PG-TSON-8-3 footprint is source-down, which simplifies Kelvin-source connection and reduces source-inductance ringing during hard switching. Pair with IRSM808-105MH or TLE94104EPXUMA1 three-phase driver for compact industrial motion control.
Empfohlen
Solar Inverter Boost / Buck Stage
In solar micro-inverter and string-inverter boost stages, the ISC030N12NM6ATMA1 serves as the active switch on the high-voltage side of a 60 to 100 VDC photovoltaic input. The 120 V rating provides margin above the maximum power-point voltage under cold-panel conditions (Voc can exceed 100 V at 0 C), and the 3.0 mOhm RDS(on) reduces conduction loss in continuous-current-mode operation. Use it with a TLD5097EPXUMA1 MPPT controller or ICE3RBR1765JGXUMA1 quasi-resonant controller for high-efficiency solar conversion.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für ISC030N12NM6ATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | ISC151N08NM6ATMA1 | ISC015N06NM5ATMA1 | ISC028N03LF2SATMA1 | ISC045N03L5SATMA1 | ISC011N04NM7VATMA1 | VBGQA1103 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | PG-TSON-8-3 (SuperSO8 5x6) | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same | DFN8 5x6 - same |
| VDS max | 120 V | 80 V (-33%) | 60 V (-50%) | 30 V (-75%) | 30 V (-75%) | 40 V (-67%) | 120 V (same) |
| Technology generation | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS LF2 | OptiMOS 5 | OptiMOS 7 | Trench (VBsemi) |
| Channel polarity | N-channel | N-channel | N-channel | N-channel | N-channel | N-channel | N-channel |
Wichtigste Unterscheidungsmerkmale
- Higher voltage class than typical 80 V OptiMOS 6 alternates (vs. ISC151N08NM6ATMA1)
- Newer OptiMOS 6 generation vs OptiMOS 5 (vs. ISC015N06NM5ATMA1)
- Pin-compatible Chinese alternative for sourcing flexibility (vs. VBGQA1103)
Designhinweise
Estimated: at continuous ID = 50 A with RDS(on) = 3.4 mOhm, conduction loss is approximately P = I^2 x R = 50 x 50 x 0.0034 = 8.5 W. With the PG-TSON-8-3 RthJA on a 1 sq inch copper pour (~40 C/W), this drives a junction rise of ~340 C above ambient, which is unacceptable. Designers must implement thermal-via arrays under the exposed pad, multi-layer copper pours (2 oz or 3 oz), and possibly parallel devices to stay below 100 C junction rise at full load.
Route the gate drive trace as a Kelvin connection - take the gate-drive return directly from the source pad (pin 3 / exposed pad), not from a remote ground point. This eliminates the source-inductance voltage spike that otherwise slows turn-off and can cause false turn-on of the complementary FET in a half-bridge. Keep the gate loop area below 0.5 sq cm and place the gate-resistor within 5 mm of the gate pin.
Place the ISC030N12NM6ATMA1 on the same PCB side as its gate driver, with no vias in the high-current drain-source path. Use 2 oz or heavier copper on the drain and source planes, and stitch thermal vias (0.3 mm diameter, 1 mm pitch) directly under the exposed thermal pad to the inner ground plane. Keep the high-dV/dt drain node away from the gate trace to minimize capacitive coupling.
Do not operate the ISC030N12NM6ATMA1 with VGS below 6 V in production. At 4.5 V (logic-level), RDS(on) increases by ~80 % and may exceed thermal limits at the rated current. If a 4.5 V gate drive is unavoidable (e.g. microcontroller GPIO), choose a logic-level OptiMOS part instead. Also, never exceed VGS = +/- 20 V absolute maximum - use a gate-source Zener clamp of 16 V for fault protection.
In hard-switched half-bridge applications, source-inductance ringing can exceed 30 V during turn-off. Add a small RC snubber (10 ohm + 1 nF) across drain-source if the measured ring exceeds 80 % of VDS rating. Alternatively, use a slower gate-drive resistor (10 to 22 ohm instead of 2.2 ohm) to trade switching loss against ringing amplitude.
Compliance-Informationen
Standard-grade industrial MOSFET. Not AEC-Q100 qualified - for automotive safety-critical loads choose an AEC-Q100 qualified Infineon OptiMOS 6 part. RoHS and REACH compliance per Infineon product page.
