ISC045N03L5SATMA1 vs IPD70N10S3L12ATMA2 Vergleich

Detaillierter Direktvergleich von ISC045N03L5SATMA1 von Infineon und IPD70N10S3L12ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ISC045N03L5SATMA1 IPD70N10S3L12ATMA2
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,51 $0,86
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC045N03L5SATMA1 IPD70N10S3L12ATMA2
Transistortyp N-Channel MOSFET —
Technology OptiMOS 5 / Trench OptiMOS-T (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) 30 V 100 V
Continuous Drain Current (ID) at TA=25°C 18 A —
Continuous Drain Current (ID) at TC=25°C 63 A —
On-Resistance RDS(on) max @ VGS=10V 4.5 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 2 V @ ID=250 µA —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max rating]
Total Gate Charge (Qg) 13 nC @ VGS=10 V —
Input Capacitance (Ciss) 870 pF @ VDS=15 V —
Power Dissipation (PD) at TA=25°C 2.5 W —
Power Dissipation (PD) at TC=25°C 30 W —
Gehäuse SuperSO8 5x6 (PG-TDSON-8-6) PG-TO252-3-11 (DPAK)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55 °C to +150 °C —
RoHS-Status Compliant Compliant
Continuous Drain Current (ID) at TC — 70 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current]
On-State Resistance R_DS(on) typ @ VGS=10V — 11.5 mOhm
On-State Resistance R_DS(on) max @ VGS=10V — [DATA_NEEDED: R_DS(on) max]
Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation PD at TC — 125 W
Betriebs-Sperrschichttemperatur — -55 C to +175 C
MSL-Level — [DATA_NEEDED: MSL level]

Datenblätter & Ressourcen

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