ISC045N03L5SATMA1 vs IPD70N10S3L12ATMA2 Comparison

Detailed side-by-side comparison of ISC045N03L5SATMA1 by Infineon and IPD70N10S3L12ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC045N03L5SATMA1 IPD70N10S3L12ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC045N03L5SATMA1 IPD70N10S3L12ATMA2
Transistor Type N-Channel MOSFET —
Technology OptiMOS 5 / Trench OptiMOS-T (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) 30 V 100 V
Continuous Drain Current (ID) at TA=25°C 18 A —
Continuous Drain Current (ID) at TC=25°C 63 A —
On-Resistance RDS(on) max @ VGS=10V 4.5 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 2 V @ ID=250 µA —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max rating]
Total Gate Charge (Qg) 13 nC @ VGS=10 V —
Input Capacitance (Ciss) 870 pF @ VDS=15 V —
Power Dissipation (PD) at TA=25°C 2.5 W —
Power Dissipation (PD) at TC=25°C 30 W —
Package SuperSO8 5x6 (PG-TDSON-8-6) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 °C to +150 °C —
RoHS Status Compliant Compliant
Continuous Drain Current (ID) at TC — 70 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current]
On-State Resistance R_DS(on) typ @ VGS=10V — 11.5 mOhm
On-State Resistance R_DS(on) max @ VGS=10V — [DATA_NEEDED: R_DS(on) max]
Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation PD at TC — 125 W
Operating Junction Temperature — -55 C to +175 C
MSL Level — [DATA_NEEDED: MSL level]

Datasheets & Resources

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