ISC045N03L5SATMA1 vs IPD70N10S3L12ATMA2 Comparación
Comparación detallada lado a lado de ISC045N03L5SATMA1 por Infineon y IPD70N10S3L12ATMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | ISC045N03L5SATMA1 | IPD70N10S3L12ATMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,51 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC045N03L5SATMA1 | IPD70N10S3L12ATMA2 |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 / Trench | OptiMOS-T (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | 100 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TC=25°C | 63 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V @ ID=250 µA | — |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Qg) | 13 nC @ VGS=10 V | — |
| Input Capacitance (Ciss) | 870 pF @ VDS=15 V | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| Encapsulado | SuperSO8 5x6 (PG-TDSON-8-6) | PG-TO252-3-11 (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C | — |
| Estado RoHS | Compliant | Compliant |
| Continuous Drain Current (ID) at TC | — | 70 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance R_DS(on) typ @ VGS=10V | — | 11.5 mOhm |
| On-State Resistance R_DS(on) max @ VGS=10V | — | [DATA_NEEDED: R_DS(on) max] |
| Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD at TC | — | 125 W |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Nivel MSL | — | [DATA_NEEDED: MSL level] |