ISC046N13NM6ATMA1 vs ISC060N10NM6ATMA1 Vergleich
Detaillierter Direktvergleich von ISC046N13NM6ATMA1 von Infineon und ISC060N10NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N10NM6ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | ISC046N13NM6ATMA1 | ISC060N10NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,08 | $1,43 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 135 V | 100 V |
| Continuous Drain Current (ID) at TA | 17 A | — |
| Continuous Drain Current (ID) at TC | 142 A | — |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 211 W | — |
| Gehäuse / Bauform | PG-TDSON-8 | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +175 C | -55 °C to +175 °C (TJ) |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6 (thin-wafer trench) |
| Gate Drive (recommended) | 10 V (typical) | — |
| RoHS-Status | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Series | — | OptiMOS 6 100 V |
| Continuous Drain Current (ID) at Ta | — | 15 A |
| Continuous Drain Current (ID) at Tc | — | 97 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on)) | — | 6 mΩ at VGS = 10 V, ID = 25 A |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.3 V (typical) |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Gehäuse | — | PG-TDSON-8 FL (5.15 x 6.15 mm) |
| Polarity | — | N-Channel |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |