ISC046N13NM6ATMA1 vs ISC0703NLSATMA1 Vergleich
Detaillierter Direktvergleich von ISC046N13NM6ATMA1 von Infineon und ISC0703NLSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC046N13NM6ATMA1 | ISC0703NLSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,08 | $0,51 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 6 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 135 V | 60 V |
| Continuous Drain Current (ID) at TA | 17 A | — |
| Continuous Drain Current (ID) at TC | 142 A | — |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 211 W | — |
| Gehäuse / Bauform | PG-TDSON-8 | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +175 C | -55C to +150C (junction) |
| Technology | OptiMOS 6 trench MOSFET | Trench MOSFET (OptiMOS family) |
| Gate Drive (recommended) | 10 V (typical) | — |
| RoHS-Status | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 13 A |
| Continuous Drain Current (ID) at Tc=25C | — | 57 A |
| Power Dissipation (PD) at Ta=25C | — | 3 W |
| Power Dissipation (PD) at Tc=25C | — | 44 W |
| Gehäuse | — | PG-TDSON-8 (5x6 mm) |
| Standard Package Quantity | — | 5,000 (reel) |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS rating] |