ISC046N13NM6ATMA1 vs ISC0805NLSATMA1 Vergleich
Detaillierter Direktvergleich von ISC046N13NM6ATMA1 von Infineon und ISC0805NLSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC046N13NM6ATMA1 | ISC0805NLSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,08 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 135 V | 100 V |
| Continuous Drain Current (ID) at TA | 17 A | — |
| Continuous Drain Current (ID) at TC | 142 A | — |
| Power Dissipation (PD) at TA | 3 W | 2.5 W |
| Power Dissipation (PD) at TC | 211 W | 74 W |
| Gehäuse / Bauform | PG-TDSON-8 | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +175 C | -55 °C to +150 °C |
| Technology | OptiMOS 6 trench MOSFET | — |
| Gate Drive (recommended) | 10 V (typical) | — |
| RoHS-Status | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Product Family | — | OptiMOS™ 5 |
| Continuous Drain Current (ID) at TA=25°C | — | 13 A |
| Continuous Drain Current (ID) at TC=25°C | — | 71 A |
| On-Resistance RDS(on) max at VGS=10V | — | 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] |
| On-Resistance RDS(on) max at VGS=4.5V | — | 10.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 2.3 V |
| Gate Charge Qg typ at VGS=4.5V | — | 16 nC |
| Input Capacitance Ciss | — | 2.2 nF |
| Reverse Transfer Capacitance Crss | — | 23 pF |
| Output Capacitance Coss | — | 360 pF |
| Gehäuse | — | PG-TDSON-8-46 (SuperSO8 5x6) |