ISC046N13NM6ATMA1 vs ISC0805NLSATMA1 对比
详细并排对比 ISC046N13NM6ATMA1 出自 Infineon 和 ISC0805NLSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC046N13NM6ATMA1 | ISC0805NLSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.08 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 135 V | 100 V |
| Continuous Drain Current (ID) at TA | 17 A | — |
| Continuous Drain Current (ID) at TC | 142 A | — |
| Power Dissipation (PD) at TA | 3 W | 2.5 W |
| Power Dissipation (PD) at TC | 211 W | 74 W |
| 封装 / 外壳 | PG-TDSON-8 | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +175 C | -55 °C to +150 °C |
| Technology | OptiMOS 6 trench MOSFET | — |
| Gate Drive (recommended) | 10 V (typical) | — |
| RoHS 状态 | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Product Family | — | OptiMOS™ 5 |
| Continuous Drain Current (ID) at TA=25°C | — | 13 A |
| Continuous Drain Current (ID) at TC=25°C | — | 71 A |
| On-Resistance RDS(on) max at VGS=10V | — | 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] |
| On-Resistance RDS(on) max at VGS=4.5V | — | 10.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 2.3 V |
| Gate Charge Qg typ at VGS=4.5V | — | 16 nC |
| Input Capacitance Ciss | — | 2.2 nF |
| Reverse Transfer Capacitance Crss | — | 23 pF |
| Output Capacitance Coss | — | 360 pF |
| 封装 | — | PG-TDSON-8-46 (SuperSO8 5x6) |