ISC052N03LF2SATMA1 vs ISZ033N03LF2SATMA1 Vergleich
Detaillierter Direktvergleich von ISC052N03LF2SATMA1 von Infineon und ISZ033N03LF2SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC052N03LF2SATMA1 | ISZ033N03LF2SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,35 | $0,68 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 30V | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TC=25°C | 74 A | — |
| On-Resistance RDS(on) max at VGS=10V | 5.2 mΩ | — |
| Power Dissipation (PD) at TA=25°C | 3 W | — |
| Power Dissipation (PD) at TC=25°C | 52 W | — |
| Gehäuse | PG-TDSON-8-62 (TDSON EP) | PG-TSDSON-8 FL (8-pin) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55°C to +150°C | — |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 5 |
| Polarity | N-Channel | — |
| Pin-Anzahl | 8 | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 20 A |
| Continuous Drain Current (ID) at TC=25C | — | 109 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TA=25C | — | 3 W |
| Power Dissipation (PD) at TC=25C | — | 71 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 2.35 V max @ 30 uA |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |