ISC052N03LF2SATMA1 vs ISZ033N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC052N03LF2SATMA1 by Infineon and ISZ033N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC052N03LF2SATMA1
ISC052N03LF2SATMA1 - 30V N-Ch 74A OptiMOS 5 MOSFET | Infineon
ISC052N03LF2SATMA1 β ActiveInfineon
ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon
ISZ033N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC052N03LF2SATMA1 | ISZ033N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.35 | $0.68 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 30V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25Β°C | 18 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 74 A | β |
| On-Resistance RDS(on) max at VGS=10V | 5.2 mΞ© | β |
| Power Dissipation (PD) at TA=25Β°C | 3 W | β |
| Power Dissipation (PD) at TC=25Β°C | 52 W | β |
| Package | PG-TDSON-8-62 (TDSON EP) | PG-TSDSON-8 FL (8-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C | β |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 5 |
| Polarity | N-Channel | β |
| Pin Count | 8 | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25C | β | 20 A |
| Continuous Drain Current (ID) at TC=25C | β | 109 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TA=25C | β | 3 W |
| Power Dissipation (PD) at TC=25C | β | 71 W |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | 2.35 V max @ 30 uA |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typ] |
| Operating Junction Temperature | β | -55 C to +175 C |