ISC058N04NM5ATMA1 vs ISC016N08NM8ATMA1 Vergleich
Detaillierter Direktvergleich von ISC058N04NM5ATMA1 von Infineon und ISC016N08NM8ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | ISC058N04NM5ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,60 | $1,02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V Normal Level | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25C) | 63 A | — |
| Continuous Drain Current (ID, Ta=25C) | 17 A | — |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | 5.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.4 V | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (TA=25C) | 3 W | — |
| Power Dissipation (TC=25C) | 42 W | — |
| Gehäuse | PG-TDSON-8 FL (SuperSO8 5x6 mm) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | Trench-gate OptiMOS 8 (silicon) |
| Betriebstemperaturbereich | -55C to +175C | -55 C to +150 C (junction) |
| RoHS Compliance | RoHS Compliant | — |
| MSL (Moisture Sensitivity Level) | MSL per JEDEC J-STD-020 | — |
| Gate Drive Level | Normal Level (10V VGS recommended) | — |
| Product Series | — | OptiMOS 8 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 80 V |
| Gate-Source Voltage (VGS max) | — | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) at Tc | — | 268 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 1.6 mOhm |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| RoHS-Status | — | Compliant |
| Lead-Free / Halogen-Free | — | Lead-free (per Infineon product page) |
| MSL-Level | — | 1 (per JEDEC J-STD-020E classification for SuperSO8) |